DocumentCode :
1936875
Title :
The Effect of Ion-Irradiation and Rapid Thermal Annealing on TiSie and MoSie
Author :
Groberg, Leif ; Krontiras, Christos ; Saarilahti, Jaakko ; Suni, Ilkka
Author_Institution :
Technical Research Centre of Finland Semiconductor Laboratory, Otakaari 7 B, SF-02150 Espoo, Finland
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
209
Lastpage :
212
Keywords :
Amorphous materials; Conductivity; Laboratories; Physics; Rapid thermal annealing; Semiconductor films; Silicides; Silicon; Sputtering; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436541
Link To Document :
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