DocumentCode
1937592
Title
Membrane multichip module technology on silicon
Author
Cheng, Wheling ; Beiley, Mark A. ; Wong, S. Simon
Author_Institution
Stanford Univ., CA, USA
fYear
1993
fDate
15-18 Mar 1993
Firstpage
69
Lastpage
73
Abstract
A membrane multichip module fabricated on a silicon substrate by utilizing conventional IC processing techniques is discussed. A chip attachment technology to make electrical connections between the wires on a chip and those on the substrate in the membrane area is described. The contacts between the chips and the module are defined by conventional IC photolithography and formed by metal deposition so that they can be very small and dense. The contacts can be located anywhere over an entire chip and not limited just to the edges. The strong bonding of polyimide can ensure the reliability of the modules. The resistance of 10×10-μm2 and 20×20-μm2 contacts is 0.060 Ω/contact and 0.024 Ω/contact, respectively. Multiple-layers of metals are embedded into the membrane to increase the flexibility of routing between chips
Keywords
circuit reliability; contact resistance; integrated circuit technology; multichip modules; photolithography; silicon; substrates; IC photolithography; IC processing techniques; Si substrate; chip attachment technology; contact resistance; electrical connections; membrane multichip module technology; metal deposition; metal multiple layers; module reliability; polyimide bonding; routing; semiconductor; Adhesives; Aluminum; Biomembranes; Bonding; Multichip modules; Polyimides; Routing; Silicon; Sputter etching; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Multi-Chip Module Conference, 1993. MCMC-93, Proceedings., 1993 IEEE
Conference_Location
Santa Cruz, CA
Print_ISBN
0-8186-3540-1
Type
conf
DOI
10.1109/MCMC.1993.302149
Filename
302149
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