Title :
Gate Oxide Reliability in a Sealed Interface Local Oxidation Scheme
Author :
Voors, I.J. ; Osinski, K. ; Vollebregt, F.H.A. ; Seams, C.A.
Author_Institution :
Advanced MOS Process Development Group, Philips Research Laboratories, P.O. Box 80,000, 5600 JA Eindhoven, The Netherlands
Abstract :
The influence of process steps, preceding the gate oxidation, on gate oxide integrity in a Sealed Interface Local Oxidation (SILO) scheme, is studied. Bird´s beak etchback procedure and double sacrificial oxidation appeared to have great effect on defect densities, measured by constant current (Qbd) technique. By means of ramped field (Ebd) measurements no influence of field oxidation temperature, bird´s beak etchback and sacrificial oxidation procedure was seen.
Keywords :
Current measurement; Density measurement; Dry etching; Fluid flow measurement; Hafnium; Measurement standards; Oxidation; Stress measurement; Temperature distribution; Thermal stresses;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
