Title :
Ion-implanted WN 0.25 /spl mu/m gate MESFET fabricated using i-line photolithography for application to MMIC and digital IC
Author :
Eung-Gie Oh ; Jeon-Wook Yang ; Chul-Soon Park ; Kwang-Eui Pyun
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
Straightforward WN 0.25 /spl mu/m gate MESFET process based on direct ion-implantation and i-line photolithography with double exposure process has produced high performance MESFETs. The maximum transconductance of 600 mS/mm and the k-factor of 450 ms/Vmm were obtained. As high as 65 GHz of cut-off frequency has been realized without any deembedding of parasitic effects. The MESFET shows the minimum noise figure of 0.87 dB and the associated gain of 9.97 dB at 12 GHz.
Keywords :
MESFET integrated circuits; MMIC; Schottky gate field effect transistors; digital integrated circuits; ion implantation; photolithography; semiconductor technology; 0.25 micron; 0.87 dB; 12 to 65 GHz; 9.97 dB; MMIC; WN; WN gate MESFET; cut-off frequency; digital IC; double exposure; fabrication; gain; i-line photolithography; ion-implantation; k-factor; noise figure; parasitic effects; transconductance; Application specific integrated circuits; Cutoff frequency; Digital integrated circuits; Gallium arsenide; Lithography; MESFET integrated circuits; MMICs; Noise figure; Resists; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528969
