DocumentCode :
1938354
Title :
Simulation of trench filling process
Author :
Gutova, Alla G. ; Neizvestny, Igor G. ; Shwartz, Natalia L. ; Yanovitskaja, Zoya Sh ; Zverev, Alexey V.
Author_Institution :
Inst. of Semicond., Novosibirsk State Univ., Russia
fYear :
2004
fDate :
1-5 July 2004
Firstpage :
42
Lastpage :
45
Abstract :
Investigation of deep gaps filling during deposition processes were carried out using Monte Carlo simulation. Critical deposition conditions separating complete and incomplete gap filling and dependence of critical deposition conditions on geometrical size of trench were obtained. The quality of gap fill was demonstrated to be dependent not only on deposition conditions but on the chemical nature of adsorbate as well. For nanotrench of definite size there is critical binding energy adsorbate-adsorbate for the given deposition parameters providing high-quality filling.
Keywords :
Monte Carlo methods; ULSI; adsorbed layers; binding energy; isolation technology; self-diffusion; semiconductor growth; semiconductor process modelling; Monte Carlo simulation; ULSI; adsorbate chemical nature; adsorbate-adsorbate critical binding energy; deposition processes; geometrical trench size; trench filling process simulation; Diffusion processes; Isolation technology; Monte Carlo methods; Semiconductor growth; Semiconductor process modeling; Ultra-large-scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
Print_ISBN :
5-7782-0463-9
Type :
conf
DOI :
10.1109/PESC.2004.241018
Filename :
1358285
Link To Document :
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