• DocumentCode
    1938532
  • Title

    Simulation of selective etching process of AIIIBV semiconductors

  • Author

    Khaynovskaya, Natalia V. ; Kamenskaya, Anna V.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2004
  • fDate
    1-5 July 2004
  • Firstpage
    66
  • Lastpage
    67
  • Abstract
    In this paper the program for two-dimensional simulation of selective etching of the AIIIBV semiconductors is considered. By creation of algorithm of selective etching it was taken into account the following factors: complexity of a mask, number of used surface orientations, etching solution and so on. On the finishing cycle of the program the working window shows a kind of a resulting structures of diffraction lattices. The results of simulation are compared with experiment.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; masks; semiconductor epitaxial layers; semiconductor lasers; surface structure; AIIIBV semiconductors; GaAs; GaAs surface; diffraction lattice structure; etching solution; injection lasers; mask complexity; surface orientations; two-dimensional selective etching process simulation; Etching; Gallium compounds; Masks; Semiconductor epitaxial layers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2004. Proceedings. 5th Annual. 2004 International Siberian Workshop on
  • Print_ISBN
    5-7782-0463-9
  • Type

    conf

  • DOI
    10.1109/PESC.2004.241050
  • Filename
    1358293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1938532