Title :
Thermal Effects in a Bendable InGaN/GaN Quantum-Well Light-Emitting Diode
Author :
Horng-Shyang Chen ; Chun-Han Lin ; Pei-Ying Shih ; Chieh Hsieh ; Chia-Ying Su ; Yuh-Renn Wu ; Yean-Woei Kiang ; Yang, Chih-Chung C. C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The fabrication of a bendable light-emitting diode (BLED) and the comparison of its performance with that of a vertical light-emitting diode (VLED) are shown. In particular, the difference in their thermal responses is investigated. Before it is overheated, the BLED has higher output intensity, when compared with the VLED, particularly when the duty cycle of current injection is large. This result is attributed to the larger thermal expansion of the attached metal layer for applying a strong tensile strain to the nitride epitaxial layer in current-induced heating of the BLED such that the quantum-confined Stark effect in its quantum-well layers is reduced. Such a tensile strain is weaker in the VLED because of the moderation of the wafer-bonded Si substrate.
Keywords :
III-V semiconductors; Stark effect; gallium compounds; heating; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; thermal expansion; BLED fabrication; InGaN-GaN; Si; VLED; bendable quantum well light emitting diode; current injection; current-induced heating; nitride epitaxial layer; quantum-confined Stark effect; quantum-well layers; tensile strain; thermal effects; thermal expansion; thermal responses; vertical light emitting diode; Epitaxial layers; Gallium nitride; Heating; Light emitting diodes; Silicon; Substrates; Tensile strain; Bendable light-emitting diode; quantum-confined Stark effect; thermal effect;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2326679
