Voltage Dependency of Propagating Single-Event Transient Pulsewidths in 90-nm CMOS Technology

Author

Junrui Qin ; Shuming Chen ; Bin Liang ; Zhen Ge ; Yibai He ; Yankang Du ; Biwei Liu ; Jianjun Chen ; Dawei Li

Author_Institution

Sch. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China

Volume

14

Issue

1

fYear

2014

fDate

Mar-14

Firstpage

139

Lastpage

145

Abstract

This paper reports on the supply voltage dependency of single-event transient (SET) propagation and multinode charge collection phenomena in integrated circuits. We have found that the SET pulsewidth propagating to subsequent stages in a circuit may decrease with reduced power supply voltage, which runs counter to the general conclusion that ultralow power applications are much more susceptible to disruption from a particle strike. This effect provides the circuit designers a guidance to reconsider the impact of voltage on SET pulsewidth.

Keywords

CMOS integrated circuits; integrated circuits; power supply circuits; power supply quality; radiation hardening (electronics); CMOS technology; SET pulsewidth; circuit designers; integrated circuits; multinode charge collection; power supply voltage; propagating single-event transient pulsewidths; single-event transient propagation; size 90 nm; supply voltage dependency; ultralow power applications; Power generation; Power supplies; Voltage control; Multinode charge collection; single-event transient (SET); subthreshold; ultralow power voltage;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2255597

Filename

6490364