DocumentCode :
1941700
Title :
High-speed silicon-organic hybrid (SOH) modulator with 1.6 fJ/bit and 180 pm/V in-device nonlinearity
Author :
Palmer, R. ; Koeber, S. ; Heni, Wolfgang ; Elder, D.L. ; Korn, D. ; Yu, Haoyong ; Alloatti, L. ; Koenig, S. ; Schindler, Philipp C. ; Bogaerts, W. ; Pantouvaki, M. ; Lepage, G. ; Verheyen, P. ; Van Campenhout, J. ; Absil, P. ; Baets, Roel ; Dalton, L.R. ;
Author_Institution :
Inst. IPQ & IMT, Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
fYear :
2013
fDate :
22-26 Sept. 2013
Firstpage :
1
Lastpage :
3
Abstract :
We report on a 40 Gbit/s silicon-organic hybrid (SOH) modulator with 11 dB extinction ratio. A novel electro-optic chromophore with record in-device nonlinearity of 180 pm/V leads to VπL = 0.5 Vmm and a low energy consumption of 1.6 fJ/bit at 12.5 Gbit/s.
Keywords :
electro-optical modulation; elemental semiconductors; high-speed optical techniques; silicon; SOH modulator; Si; bit rate 12.5 Gbit/s; bit rate 40 Gbit/s; electro-optic chromophore; high-speed silicon-organic hybrid modulator; low energy consumption; record in-device nonlinearity;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Communication (ECOC 2013), 39th European Conference and Exhibition on
Conference_Location :
London
Electronic_ISBN :
978-1-84919-759-5
Type :
conf
DOI :
10.1049/cp.2013.1443
Filename :
6647636
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1941700
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