Title :
A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s
Author :
Kumagai, Y. ; Inatsuka, T. ; Kuroda, R. ; Teramoto, A. ; Suwa, T. ; Sugawa, S. ; Ohmi, T.
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10-17 - 10-17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 1×10-18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.
Keywords :
MOSFET; integrated circuit testing; leakage currents; MOSFET; extremely low gate leakage current measurement; random telegraph signal; statistical characteristics; stress induced leakage current; test circuit; time 80 s; Contacts; Logic gates; Switches; Transistors;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4673-1027-7
DOI :
10.1109/ICMTS.2012.6190631
