Title :
Process and Model of Short-Gate Diffused InGaAs JFET´s for Integrated Pin - FET Photodetector
Author :
Nguyen, L. ; Allovon, M. ; Blanconnier, P. ; Bourdon, B. ; Caquot, E. ; Scavennec, A.
Author_Institution :
Centre National d´´Etudes des Telecommunications, Laboratoire de Bagneux, 196, avenue Henri Ravera, 92220 Bagneux France
Abstract :
Junction Field Effect Transistors with a micron diffused gate have been fabricated on InGaAs/InP grown by molecular beam epitaxy (MBE). Transconductances higher than 200 mS/mm with a channel doping level of 2.1016 cm¿3 have been measured. A compact model for PIN - FET photodetector has been developed to optimize e signal to noise ratio.
Keywords :
Doping; FETs; Indium gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Signal to noise ratio; Silicon compounds; Substrates; Wet etching; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
