Title :
Tungsten Silicide Resistors for GaAs MMICs
Author :
Allan, D A ; Ng, T K ; Gilbert, M J
Author_Institution :
Compound Semiconductor Microelectronics Section, British Telecom Research Laboratories, Ipswich, United Kingdom.
Abstract :
Tungsten silicide resistors in the range 50-300 ohm/square have been deposited on GaAs by rf sputtering and patterned by etching in an SF6 plasma. The stability of the resistors has been demonstrated by accelerated ageing at elevated temperatures. A change in resistance of less than 0.3% after 1000 hours at 125°C was observed when a Si3N4 passivation layer was used to encapsulate the resistors.
Keywords :
Gallium arsenide; MMICs; Plasma accelerators; Plasma applications; Plasma temperature; Resistors; Silicides; Sputter etching; Sputtering; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
