DocumentCode :
1942517
Title :
Bipolar Heterojunction Transistors: Out of Models into Reality
Author :
Holden, A.J.
Author_Institution :
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northants, NN12 8EQ, U.K.
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
487
Lastpage :
496
Abstract :
The modelled and measured capabilities of the Bipolar Heterojunction Transistor are reviewed. The device is shown to have potential in high speed digital ICs and in microwave power amplification. It has demonstrated a world beating record for high speed divider circuits but is being hotly pursued by the Silicon Bipolar Junction Transistor. On paper it has promised much and it is now becoming a reality.
Keywords :
Bipolar transistors; CMOS logic circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; MOSFETs; Microwave devices; Microwave transistors; Optical interconnections; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436811
Link To Document :
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