Title :
A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator
Author :
Wong, T.Y.K. ; Freundorfer, A.P. ; Beggs, B.C. ; Sitch, J.E.
Author_Institution :
Adv. Technol. Lab., Bell-Northern Res., Ottawa, Ont., Canada
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
High power, high frequency linear distributed amplifiers are available commercially which provide single-ended drive capability from a single-ended source. The purpose of this paper is to present an AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier operating at 10 Gb/s. The amplifier is designed to drive a III-V Mach-Zehnder modulator also developed at Bell-Northern Research.
Keywords :
HF amplifiers; III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; differential amplifiers; distributed amplifiers; driver circuits; electro-optical modulation; gallium arsenide; heterojunction bipolar transistors; optical communication equipment; power amplifiers; 10 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier; Bell-Northern Research; III-V Mach-Zehnder modulator; distributed output stage; functional probe yield; lightwave communication; Delay; Distributed amplifiers; Drives; Frequency; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Optical interferometry; Phase modulation; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.528994
