Title :
High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers
Author :
Chen, Y.C. ; Wu, C.S. ; Pao, C.K. ; Cole, M. ; Bardai, Z. ; Hou, L.D. ; Midford, T.A. ; Cisco, T.C.
Author_Institution :
Hughes Aircraft Co., Torrance, CA, USA
fDate :
Oct. 29 1995-Nov. 1 1995
Abstract :
A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for the fabrication of high power X-band monolithic amplifiers. The material structure and gate recess process were engineered such that the device breakdown voltage was optimized without sacrificing gain and efficiency. A two-stage high power X-band monolithic amplifier based on the optimized device has been developed. When the amplifier was operated at V/sub ds/=10 V, an output power of 9 W was achieved across the 7 to 10 GHz frequency range. A peak saturated output power of 10 W, corresponding to a power density of 1 W/mm, occurred at 8.5 GHz. When biased at 7 V, the amplifier generated a peak power of 6.7 W with an associated power added efficiency of 40% at 8.5 GHz.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; microwave power amplifiers; power amplifiers; 0.25 micron; 40 percent; 6.7 to 10 W; 7 to 10 GHz; 7 to 10 V; InGaAs-AlGaAs; InGaAs/AlGaAs pseudomorphic HEMT; breakdown voltage; device optimization; fabrication; gain; gate recess; output power; power added efficiency; power density; two-stage high power X-band monolithic amplifier; Design optimization; Fabrication; Frequency; HEMTs; High power amplifiers; Indium gallium arsenide; PHEMTs; Power amplifiers; Power engineering and energy; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-2966-X
DOI :
10.1109/GAAS.1995.529011
