Title :
Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and Its Statistical Effects
Author :
Choi, SeongWook ; Park, Sooyoung ; Park, Hong-Hyun ; Park, Young June ; Baek, Chang-Ki
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
Abstract :
Mobility degradation due to the interface trap generated by the NBTI stress is simulated considering the discrete nature of the interface trap. We evaluate the relationship between threshold voltage shift (DeltaVth) and drain current degradation (DeltaID) including the mobility degradation due to the traps. The results can be used, for example, to predict DeltaVth in the On-the-fly NBTI measurement. Moreover, the statistical modeling for the degradation of ID due to the spatial distribution of the interface trap is investigated.
Keywords :
carrier mobility; interface states; power MOSFET; semiconductor device models; statistical analysis; NBTI mobility degradation simulation; NBTI stress; PMOSFET device; carrier mobility model; discrete interface trap; drain current degradation; spatial distribution; statistical modeling; threshold voltage shift; Computational modeling; Computer science; Computer simulation; Degradation; Hydrogen; Niobium compounds; Predictive models; Size measurement; Stress measurement; Titanium compounds;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3974-8
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2009.5290198
