Title :
Observation of extremely large sheet hole densities in uncapped undoped AlSb layers
Author :
Tadayon, Bijan ; Kyono, Carl S. ; Godbey, David J. ; Tadayon, Saied ; Mittereder, Jeffrey A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
In this paper, we present a study of the electrical and physical properties of uncapped AlSb, grown by molecular beam epitaxy. Large concentrations of oxygen have been observed in the uncapped undoped AlSb layers, resulting in extremely large sheet hole densities (as high as 3×1015 cm-2 with the corresponding mobilities of about 60 cm2V-1s-1). However, for the AlSb layers capped with 50 Å of GaSb, oxygen does not penetrate beyond the GaSb cap layer, and the underlying AlSb layer is highly resistive. X-ray photoelectron spectroscopy (XPS) has been used to analyze the surface oxides for the uncapped AlSb layers. Three different oxides have been observed on the surface of the uncapped layers: Al2O3, Sb2O5, and Sb 2O3
Keywords :
III-V semiconductors; X-ray photoelectron spectra; aluminium compounds; carrier density; carrier mobility; electronic conduction in crystalline semiconductor thin films; molecular beam epitaxial growth; oxidation; semiconductor epitaxial layers; Al2O3-AlSb; AlSb; GaSb cap layer; GaSb-AlSb; MBE; Sb2O3-AlSb; Sb2O5-AlSb; X-ray photoelectron spectroscopy; XPS; electrical properties; mobilities; molecular beam epitaxy; physical properties; sheet hole densities; surface oxides; uncapped undoped AlSb layers; Chemicals; Gallium arsenide; Heterojunctions; Laboratories; Molecular beam epitaxial growth; Plasma measurements; Spectroscopy; Substrates; Surface cleaning; Wet etching;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303088
