Title :
Acceleration 1/f Noise in Silicon MOSFETs
Author :
Birbas, Amn ; Peng, Q. ; van der Ziel, A. ; van Rheenen, A.D.
Author_Institution :
Electrical Engineering Department, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Abstract :
It is usually assumed that the 1/f noise in Si-MOSFETs is limited by collision 1/f noise. We found this to be the case for devices with relatively short channel lengths (L≪10¿m) but for channels of intermediate length (10¿m≪L≪194¿m) we found that the Hooge parameter varies as L2. We attributed this to acceleration of the electrons by the applied field, accompanied by Bremsstrahlung emission and current 1/f noise generation. This is a new noise source.
Keywords :
Acceleration; Density estimation robust algorithm; Electron emission; Equations; Genetic expression; MOSFETs; Noise generators; Semiconductor device noise; Silicon; Writing;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
