Title :
An improved gate breakdown model for studying high efficiency MESFET operation
Author :
Winslow, T.A. ; Morris, A.S. ; Trew, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A gate breakdown model for MESFETs is presented. The model is based on quantum tunneling initiated avalanche ionization. The breakdown model is incorporated into a physics based MESFET model. Forward and reverse gate conduction an shown to be the main factors in determining the power and efficiency of MESFET amplifiers
Keywords :
Schottky gate field effect transistors; electric breakdown of solids; equivalent circuits; impact ionisation; power transistors; semiconductor device models; tunnelling; forward gate conduction; gate breakdown model; high efficiency MESFET operation; physics based MESFET model; quantum tunneling initiated avalanche ionization; reverse gate conduction; Avalanche breakdown; Breakdown voltage; Electric breakdown; Electron emission; Ionization; MESFETs; Phased arrays; Power amplifiers; Thermionic emission; Tunneling;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1993. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0894-8
DOI :
10.1109/CORNEL.1993.303114
