Technology platform for 3-D stacking of thinned embedded dies

Author

Iker, F. ; Soussan, P. ; Beyne, E. ; Baert, K.

Author_Institution

IMEC, Leuven

fYear

2008

fDate

27-30 May 2008

Firstpage

8

Lastpage

11

Abstract

This paper presents results on the process for the embedding and 3D stacking of thin dies developed at IMEC. The embedding build-up is composed of photosensitive dielectric BCB and Copper plated metal films. Successful embedding of 15 mum thick Si dies is shown and electrical connection to pads having a dimension of 35 mum is shown. Preliminary results on stacking will also be presented. Those results include removal of the Si carrier from the embedded structures. This technique can also be used for the production of thin polymer foils with embedded dies. Results on thin foil fabrication will also be reported.

Keywords

copper; dielectric thin films; foils; integrated circuit interconnections; metallic thin films; polymer films; silicon; stacking; 3-D stacking; IMEC; Si; copper plated metal films; electrical connection; embedded structures; photosensitive dielectric BCB films; silicon carrier removal; size 15 mum; size 35 mum; thin foil fabrication; thin polymer foils production; thin silicon dies; thinned embedded dies; wafer level process; Copper; Dielectrics; Fabrication; Polymers; Power system interconnection; Production; Shape; Silicon; Stacking; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2008. ECTC 2008. 58th

Conference_Location

Lake Buena Vista, FL

ISSN

0569-5503

Print_ISBN

978-1-4244-2230-2

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2008.4549942

Filename

4549942