DocumentCode
1944669
Title
High Speed InAlAs/InGaAs Double Heterostructure p-i-n´s
Author
Bischoff, J.-C. ; Hollenbeck, T.H. ; Nottenburg, R.N. ; Tamargo, M.C. ; de Miguel, J.L. ; Moore, C.F. ; Schumacher, H.
Author_Institution
Institute for Micro and Optoelectronics, Swiss Federal Institute of Technology, CH-1015 Lausanne Switzerland; Bell Communications Research Inc., Red Bank, NJ 07701, U.S.A., as a resident visitor
fYear
1988
fDate
13-16 Sept. 1988
Abstract
MBE grown double heterostructure InAlAs/InGaAs p-i-n photodiodes have been flip-chip mounted on coplanar waveguides. Two methods: (i) incorporation of doping setback InAlAs layers between the InGaAs absorption region and the doped InAlAs layers and (ii) compositional grading have been used to reduce carrier pile-up at the heterointerfaces. Although both methods improve the diode performances, the best results were obtained with compositional grading: a quantum efficiency of ¿38 % at 1.3 ¿m, a rise time of ¿21 ps and a FWHM of ¿40 ps have been obtained for a device with a 24×24 ¿m2 area and a 0.5 ¿m thick absorption region.
Keywords
Absorption; Coplanar waveguides; Dark current; Doping; Heterojunctions; Indium compounds; Indium gallium arsenide; P-i-n diodes; PIN photodiodes; Sociotechnical systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436911
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