DocumentCode
1944977
Title
In-situ lateral fabrication of zinc and aluminum nanodots by near field optical chemical vapor deposition
Author
Yamamoto, Y. ; Kawazoe, T. ; Lee, G.H. ; Shimizu, T. ; Kourogi, M. ; Ohtsu, M.
Author_Institution
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
Nanometric Zn and Al dots were deposited on a sapphire substrate with a spacing of 100 nm. Minimum diameter of fabricated Zn and Al dots were 37nm and 25nm, respectively.
Keywords
aluminium; chemical vapour deposition; electroluminescent devices; integrated optoelectronics; nanotechnology; optical fabrication; zinc; 100 nm; 25 nm; 37 nm; Al; Zn; aluminum nanodots; chemical vapor deposition; fabrication tool; in-situ lateral fabrication; nanoscale electroluminescence devices; near field optical chemical vapor deposition; sapphire substrate; zinc nanodots; Aluminum; Artificial intelligence; Chemical vapor deposition; Optical device fabrication; Optical feedback; Optical films; Probes; Space technology; Substrates; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967953
Filename
967953
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