DocumentCode :
1945394
Title :
A Monte Carlo Study of Diffusion Coefficients of Two-Dimensional Electron Gas in HEMT AlGaAs-GaAs Structures
Author :
Zimmermann, J. ; Wu, Y.
Author_Institution :
Centre Hyperfréquences et Semiconducteurs, UA CNRS no 287, Bâtiment P3, Université de Lille-Fandres-Artois, 59655 Villeneuve d´´Ascq Cedex, France
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
103
Lastpage :
106
Abstract :
This paper Presents a Monte Carlo study of diffusion and noise in two-dimensional electron gas (2DEG) in heterojunctions. This is mainly achieved via the calculation of velocity fluctuations correlation functions of the 2DEG subjected to a driving field applied along the channel. It is found that at rather low fields when the carriers have a real two-dimensional motion, the parallel correlation functions show oscillations which we analyse in terms of scattering rates. This gives rise to 2DEG resonant noise spectra whose resonance frequency is very nearly proportional to the driving field strength.
Keywords :
Analytical models; Annealing; Electrons; Fabrication; HEMTs; Impurities; Ion implantation; Monte Carlo methods; Power dissipation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436945
Link To Document :
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