Japanese CELRAP laser fabrication: optimized Czochralski growth conditions and fundamental properties of Ho/sup 3+/ doped Lu/sub 3/Al/sub 5/O/sub 12/ crystals

Author

Sugizaki, G. ; Ota, K. ; Komatsu, K. ; Saito, H.

Author_Institution

Tech. Res. & Dev. Inst., Japan Defense Agency, Tokyo, Japan

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

The optimum Czochralski growth conditions of Ho/sup 3+/ doped Lu/sub 3/Al/sub 5/O/sub 12/ laser crystals are experimentally verified. The effective distribution coefficient of Ho/sup 3+/, and some optical (fluorescence and absorption spectra) and thermal properties (thermal conductivity) of the crystal are measured.

Keywords

crystal growth from melt; doping profiles; fluorescence; garnets; holmium; impurity absorption spectra; infrared spectra; lutetium compounds; solid lasers; thermal conductivity; Ho/sup 3+/ distribution coefficient; Ho/sup 3+/:Lu/sub 3/Al/sub 5/O/sub 12/ laser crystals; Japanese CELRAP laser; Lu/sub 3/Al/sub 5/O/sub 12/:Ho; absorption spectra; fluorescence spectra; optimized Czochralski growth conditions; thermal conductivity; Absorption; Chemical analysis; Crystallization; Crystals; Laser theory; Optical device fabrication; Optical refraction; Optical scattering; Optical variables control; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967979

Filename

967979