DocumentCode :
1945804
Title :
Shadowing Effect in Self-Aligned Contacts
Author :
Camerlenghi, E. ; Servida, E. ; Tosi, M.
Author_Institution :
SGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
fYear :
1988
fDate :
13-16 Sept. 1988
Abstract :
A comparison between arsenric and phosphorus implanted self-aligned contacts is presented; by using 2D process simulations the high leakage defectivity measured on the As contacts has been explained. Its origin arises from an insufficient overlap between the contact diffusion and the field oxide, due to a shadowing effect in a critical zone of the contact.
Keywords :
CMOS process; Doping profiles; EPROM; Implants; Lead compounds; Leakage current; Microelectronics; Performance evaluation; Shadow mapping; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436964
Link To Document :
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