High aspect ratio TSV copper filling with different seed layers

Author

Wolf, M. Jurgen ; Dretschkow, Thomas ; Wunderle, Bernhard ; Jurgensen, Nils ; Engelmann, Gunter ; Ehrmann, Oswin ; Uhlig, Albrecht ; Michel, Bernd ; Reichl, Herbert

Author_Institution

Fraunhofer Inst. for Reliability & Microintegration (IZM), Berlin

fYear

2008

fDate

27-30 May 2008

Firstpage

563

Lastpage

570

Abstract

The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the spherolyte Cu200 the electrolyte for the copper electrochemical deposition was modified for good filling behavior. Thermomechanical modeling and simulation was performed for reliability assessment.

Keywords

coating techniques; copper alloys; filling; reliability; thermomechanical treatment; copper electrochemical deposition; electrolyte; high aspect ratio TSV copper filling; reliability assessment; seed layers; thermomechanical modeling; thermomechanical simulation; through silicon via filling; Copper; Etching; Filling; Passivation; Polymer films; Resists; Silicon; Sputtering; Substrates; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2008. ECTC 2008. 58th

Conference_Location

Lake Buena Vista, FL

ISSN

0569-5503

Print_ISBN

978-1-4244-2230-2

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2008.4550029

Filename

4550029