Hot Electron Reliability of Deep Submicron MOS Transistors

The hot electron induced degradation of fully optimized N-channel MOSFET´s, having channel lengths in the range 0.3 ¿m,- 0.6 ¿m, is systematically investigated. The created defects and their influence on the device performance are evaluated with very sensitive techniques and explained using 2D modelling. The device lifetime is analysed as a function of the biasing conditions. These results are interpreted by taking into consideration the extension of the defective region as well as the local generation rate of interface states.