Title :
GaInAs Camel Diodes Grown by MBE
Author :
Marso, M. ; Chin, A. ; Bhattacharya, P. ; Beneking, H.
Author_Institution :
Institute of Semiconductor Electronics, Sommerffeldstrasse, D-5100 Aachen, F.R.G.
Abstract :
In this paper we present a camel diode in GaInAs on a InP-substrate with an ideality factor of 1.6 - 1.7. The barrier height is 0.44 eV. Switching measurements show no storage time and a fall time of 660 - 740 ps for a 50 ¿m * 50 ¿m device.
Keywords :
Area measurement; Current measurement; Doping; Etching; Schottky diodes; Semiconductor diodes; Substrates; Temperature; Thickness measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
