Title :
Temperature-controlled wafer level Joule-heated constant-current EM tests of W/AlCuSi/W wires
Author :
Anata, Y. ; Fujisaki, Y. ; Kawaji, M. ; Katto, H. ; Kubo, M.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
An automatic wafer level electromigration evaluation system has been newly developed. It quickly increases the stress current until the wire temperature reaches the target temperature by joule-heating. The stress current is then kept constant. The W/AlCuSi/W wires are evaluated with the system and the result is compared with an oven test system. The activation energy, Ea, is constant over the temperatures from 170°C to 430°C. Ea of 0.93 eV and current exponent, n, of 2.3 are obtained for 1 μm wide W/AlCuSi/W wires
Keywords :
aluminium alloys; automatic test equipment; automatic testing; circuit reliability; copper alloys; electromigration; integrated circuit testing; metallisation; silicon alloys; temperature control; tungsten; 1 micron; 170 to 430 C; IC metallisation; Joule-heated constant-current tests; W-AlCuSi-W; electromigration evaluation system; stress current; temperature-controlled wafer level tests; Automatic testing; Current density; Electrical resistance measurement; Electromigration; Ovens; Probes; Stress; System testing; Temperature; Wire;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303486
