Analysis of SiC Super Junction Transistors during pulsed operation

Testing was conducted to determine the performance of new Silicon Carbide (SiC) Super Junction Transistors (SJTs) in pulsed operation. These devices, developed at GeniSiC Semiconductor, are quasi-majority carrier devices. They were first characterized using an Agilent B1505A Power Device Analyzer to determine their operational characteristics. The devices were then pulsed using a high current test apparatus developed at Texas Tech University. After single shot measurements were taken the devices were pulsed at rep-rates of 1 Hz, 5 Hz, and 10 Hz for a total of 3000 pulses. These devices were then placed back on the curve tracer to determine if the pulse testing had any permanent effects on the device.