Capacitive accelerometer with high aspect ratio single crystalline silicon microstructure using the SOI structure with polysilicon-based interconnect technique

Author

Yamamoto, T. ; Kato, N. ; Matsui, M. ; Takeuchi, Y. ; Otsuka, Y. ; Akita, S.

Author_Institution

Labs. of Res., DENSO Corp., Aichi, Japan

fYear

2000

fDate

23-27 Jan 2000

Firstpage

514

Lastpage

519

Abstract

We have developed a new processing technique for a capacitive mechanical sensor with a single crystalline silicon microstructure using the SOI structure which enables electrical isolation and interconnected wiring. This technique can make the sensor surface completely flat, allowing the formation of a cap for resin molding and a vacuum package for an angular rate sensor

Keywords

accelerometers; annealing; capacitive sensors; etching; interconnections; microsensors; silicon-on-insulator; wafer bonding; SOI structure; Si; angular rate sensor; capacitive accelerometer; capacitive mechanical sensor; electrical isolation; high aspect ratio microstructure; polysilicon-based interconnect technique; processing technique; resin molding; single crystalline Si microstructure; vacuum package; Accelerometers; Capacitive sensors; Crystal microstructure; Crystallization; Electrodes; Mechanical sensors; Semiconductor films; Silicon; Substrates; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on

Conference_Location

Miyazaki

ISSN

1084-6999

Print_ISBN

0-7803-5273-4

Type

conf

DOI

10.1109/MEMSYS.2000.838570

Filename

838570