Test structures for extraction of MOSFET capacitances

Author

Gaffur, Husam ; Yoon, Sukyoon

Author_Institution

Fairchild Res. Center, Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

1994

fDate

22-25 Mar 1994

Firstpage

12

Lastpage

14

Abstract

The MOSFET device capacitors are very important for device and circuit modeling. This paper addresses a unique test structures to extract the device junction capacitance and to separate the peripheral capacitance into a channel and field edge components. A new simple structure has been developed to extract the device gate overlap capacitance. The implementation of these structures were successfully evaluated for submicron CMOS process

Keywords

capacitance; capacitance measurement; insulated gate field effect transistors; semiconductor device testing; MOSFET device capacitors; capacitance extraction; channel components; circuit modeling; device gate overlap capacitance; device junction capacitance; device modeling; field edge components; peripheral capacitance; submicron CMOS process; test structures; CMOS process; Capacitance measurement; Capacitors; Circuit simulation; Circuit testing; Doping; Equations; Implants; MOSFET circuits; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303511

Filename

303511