DocumentCode
1948124
Title
A Novel High-Sensitivity Photodetector with SOI MOS Structure
Author
Yamamoto, H. ; Taniguchi, K. ; Hamaguchi, C.
Author_Institution
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita-shi, Osaka 565, Japan
fYear
1996
fDate
9-11 Sept. 1996
Firstpage
379
Lastpage
382
Abstract
We propose a novel SOI MOS photodetector whose basic operation principle is based on ``self-biased´´ effect caused by electrically floating SOI film. The SOI MOS photodetector has higher sensitivity with the down-scaling of the device. It is shown experimentally that the intrinsic response time of the SOI MOS photodetector is on the order of 1¿sec.
Keywords
Delay; Electrodes; Image sensors; Lighting; Optical arrays; Photoconductivity; Photodetectors; Sensor arrays; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location
Bologna, Italy
Print_ISBN
286332196X
Type
conf
Filename
5437078
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