Title :
A soft-recovery, high speed power rectifier
Author :
Chang, H.R. ; Temple, V.A.K. ; Radun, A.V. ; Jahns, T.M.
Author_Institution :
Gen. Electr. Co., Schenectady, NY, USA
Abstract :
The authors describe a high-speed, soft-recovery power rectifier that is aimed at high-frequency switching applications. The device integrates a p-i-n region in parallel with a Schottky region to provide soft and fast recovery characteristics. Two-dimensional computer simulations were performed to analyze this device for a blocking voltage of 820 V. An optimal design has been identified, i.e. a 17 mu m unit cell with a p-well spacing of 4 mu m. The modeling results showed that in the lifetime range studied (0.03 mu s>
Keywords :
Schottky-barrier diodes; minority carriers; p-i-n diodes; rectifying circuits; 80 A; 820 V; 830 V; Schottky region; blocking voltage; computer simulations; double epitaxial layer structure; high speed power rectifier; high-frequency switching; minority carrier charges; p-i-n region; p-well spacing; soft-recovery; Application software; Breakdown voltage; Circuits; Computer simulation; Frequency; Low voltage; PIN photodiodes; Performance analysis; Rectifiers; Research and development;
Conference_Titel :
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/IAS.1989.96811
