Title :
Epi Channel MOSFETs With Low Junction Capacitances
Author :
Risch, Lothar ; Lustig, Bernhard ; Aeugle, Thomas ; Schäfer, Herbert
Author_Institution :
Siemens AG, Munich, Germany
Keywords :
Annealing; CMOS process; Capacitance; Doping profiles; Epitaxial growth; MOSFETs; Metallization; Silicidation; Substrates; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
