DocumentCode
1950367
Title
A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 μm CMOS
Author
Komijani, Abbas ; Hajimiri, Ali
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fYear
2004
fDate
3-6 Oct. 2004
Firstpage
561
Lastpage
564
Abstract
A 24 GHz, +14.5 dBm fully-integrated power amplifier with 50 Ω input and output matching is fabricated using 0.18 μm CMOS transistors. To enable this, a shielded-substrate coplanar waveguide transmission line structure is used to achieve low loss and small area. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5 dBm with a 3 dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8 V supply. The chip area is 1.26 mm2.
Keywords
CMOS analogue integrated circuits; MMIC power amplifiers; coplanar transmission lines; coplanar waveguides; impedance matching; 0.18 micron; 100 mA; 2.8 V; 24 GHz; 3.1 GHz; 50 ohm; 7 dB; CMOS transistors; fully-integrated power amplifier; input matching; output matching; shielded-substrate coplanar waveguide transmission line structure; Capacitance; Conductivity; Coplanar waveguides; Dielectric substrates; Differential amplifiers; Impedance; Microstrip; Power amplifiers; Propagation losses; Skin effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN
0-7803-8495-4
Type
conf
DOI
10.1109/CICC.2004.1358884
Filename
1358884
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