A highly integrated quad band low EVM polar modulation transmitter for GSM/EDGE applications

Author

Hadjichristos, Aristotele ; Walukas, Joel ; Klemmer, Nikolaus ; Suter, Wen ; Justice, Scott ; Uppathil, Satish ; Scott, Gary

Author_Institution

Ericsson Mobile Platforms, Research Triangle Park, NC, USA

fYear

2004

fDate

3-6 Oct. 2004

Firstpage

565

Lastpage

568

Abstract

A polar modulation transmitter, fabricated in BiCMOS technology, is presented. It uses an offset loop transmitter to achieve both GSM and EDGE phase modulation. For the 8PSK modulation, the amplitude information is reconstructed through the use of a saturated GSM power amplifier with collector voltage modulation. This solution does not require the use of SAW filters and RF isolators and maintains excellent EVM and good ACPR over a wide range of VSWR. This transmitter is part of a quad band GSM/EDGE highly integrated transceiver.

Keywords

3G mobile communication; BiCMOS integrated circuits; UHF power amplifiers; cellular radio; phase modulation; radio transmitters; 0.25 micron; 8PSK modulation; ACPR; BiCMOS; EDGE phase modulation; GSM power amplifier; collector voltage modulation; integrated transceiver; low EVM polar modulation transmitter; offset loop transmitter; quad band transmitter; third generation cellular radios; Amplitude modulation; BiCMOS integrated circuits; GSM; Phase modulation; Power amplifiers; Radio frequency; Radiofrequency amplifiers; SAW filters; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004

Print_ISBN

0-7803-8495-4

Type

conf

DOI

10.1109/CICC.2004.1358885

Filename

1358885