• DocumentCode
    1950593
  • Title

    Stress evolution of low frequency (RTS) noise and leakage current in grounded-gate nMOSFET ESD protection devices

  • Author

    Pogany, D. ; Fürböck, C. ; Litzenberger, M. ; Gornik, E. ; Gossner, H. ; Esmark, K. ; Otto, J. ; Sölkner, G.

  • Author_Institution
    Vienna University of Technology, Austria
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    604
  • Lastpage
    607
  • Keywords
    CMOS technology; Electrostatic discharge; Frequency; Leakage current; Low-frequency noise; MOSFET circuits; Protection; Pulse amplifiers; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1950593