Title :
Stress evolution of low frequency (RTS) noise and leakage current in grounded-gate nMOSFET ESD protection devices
Author :
Pogany, D. ; Fürböck, C. ; Litzenberger, M. ; Gornik, E. ; Gossner, H. ; Esmark, K. ; Otto, J. ; Sölkner, G.
Author_Institution :
Vienna University of Technology, Austria
Keywords :
CMOS technology; Electrostatic discharge; Frequency; Leakage current; Low-frequency noise; MOSFET circuits; Protection; Pulse amplifiers; Stress; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
