Title :
Geometry- and bias-dependence of leakage current and overlap capacitance in a-Si:H TFTs
Author :
Nathan, Arokia ; Austin, Mike ; Pereira, Darren ; Park, B. ; Murthy, R.V.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
In this paper, we describe the correlation in the reverse leakage and capacitance behavior in hydrogenated amorphous silicon (a-Si:H) inverted staggered thin film transistors (TFTs). The mechanism underlying both leakage and capacitance, and their bias-dependence for large reverse voltages, Vdg<30 V, may be attributed to a field-enhanced Poole-Frenkel generation and subsequent charge transport in the high field depletion region near the drain
Keywords :
Poole-Frenkel effect; amorphous semiconductors; capacitance; elemental semiconductors; hydrogen; leakage currents; silicon; thin film transistors; Si:H; a-Si:H TFT; active matrix scaling; bias-dependence; charge transport; field-enhanced Poole-Frenkel generation; geometry-dependence; high field depletion region; inverted staggered thin film transistors; large reverse voltages; leakage current; overlap capacitance; reverse leakage; Capacitive sensors; Displays; Leakage current; P-i-n diodes; Parasitic capacitance; Pixel; Sensor arrays; Silicon; Thin film transistors; Voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.838733
