Title :
SOI NMOSFETs with SiGe elevated S/D and Ni silicide
Author :
Choi, Hoon ; Oh, Hyuckjae ; Shim, JeoungChill ; Sakaguchi, Takeshi ; Kurino, Hiroyuki ; Koyanagi, Mitsumasa
Author_Institution :
Dept. of Machine Intelligence & Syst. Eng., Tohoku Univ., Sendai, Japan
Abstract :
SiGe selective epitaxial growth(SEG) and Ni silicidation technologies were developed for realizing high performance SOI MOSFETs with high current drivability. Then these technologies were applied for SOI MOSFET with elevated source/drain structure. The source/drain with the sheet resistance of 7/spl Omega//square could be obtained.
Keywords :
Ge-Si alloys; MOSFET; chemical vapour deposition; elemental semiconductors; nickel compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon-on-insulator; vapour phase epitaxial growth; Ni silicidation; NiSi; Si; SiGe; SiGe selective epitaxial growth; elevated drain structure; elevated source structure; high current drivability; high performance SOI NMOSFET; sheet resistance; CMOS technology; Germanium silicon alloys; MONOS devices; MOSFETs; Nickel; Rapid thermal annealing; Silicidation; Silicides; Silicon germanium; Substrates;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225204
