DocumentCode :
1951733
Title :
Silicide/Si/sub 1-x/Ge/sub x/ Schottky-barrier long-wavelength infrared detectors
Author :
Xiao, X. ; Sturm, J.C. ; Parihar, S.R. ; Lyon, S.A. ; Meyerhofer, D. ; Palfrey, S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fYear :
1992
fDate :
13-16 Dec. 1992
Firstpage :
125
Lastpage :
128
Abstract :
In this paper, we demonstrate for the first time both Pd/sub 2/Si/Si/sub 1-x/Ge/sub x/ and PtSi/Si/sub 1-x/Ge/sub x/ Schottky-barrier long-wavelength infrared detectors. By employing a thin silicon sacrificial cap layer for silicide formation, Ge segregation effects and consequent Fermi level pinning when metal directly reacts with Si/sub 1-x/Ge/sub x/ alloy are eliminated. The Schottky barrier height of the silicide/Si/sub 1-x/Ge/sub x/ detector measured by internal photoemission decreases with increasing Ge fraction, allowing tuning of its cutoff wavelength. The cut-off wavelength has been extended beyond 8 mu m in PtSi/Si/sub 0.85/Ge/sub 0.15/ detectors. It has been shown that high quantum efficiency and ideally low leakage can be obtained from these detectors. The fabrication processes are easily integrable with the current PtSi/Si focal-plane-array technology.<>
Keywords :
Ge-Si alloys; Schottky effect; image sensors; infrared detectors; infrared imaging; palladium compounds; photoemissive devices; platinum compounds; semiconductor materials; 8 to 12 mum; Pd/sub 2/Si-SiGe; Pd/sub 2/Si/Si/sub 1-x/Ge/sub x/; PtSi-SiGe; PtSi/Si/sub 1-x/Ge/sub x/; Schottky barrier height; Schottky-barrier long-wavelength infrared detectors; cut-off wavelength; fabrication processes; focal-plane-array technology; internal photoemission; quantum efficiency; sacrificial cap layer; silicide formation; Germanium alloys; Image sensors; Infrared detectors; Infrared imaging; Palladium compounds; Platinum compounds; Semiconductor materials; Silicon alloys;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1992.307324
Filename :
307324
Link To Document :
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