DocumentCode :
1951745
Title :
Analytical expression for the breakdown voltage of the gated diodes
Author :
Yun, Sang-Bok ; Choi, Ycarn-lk
Author_Institution :
Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
Volume :
2
fYear :
2000
fDate :
2000
Firstpage :
667
Abstract :
Analytical expression for the breakdown voltage of the gated diodes was derived in terms of the doping concentration, gate voltage and oxide thickness, and verified by two-dimensional device simulator, ATLAS. The proposed equation agrees well with simulation results within 5% average error when the gate voltage changes from -70 V to 130 V in case of ND=1×1015/cm3 and agrees well with simulation results within 10% average error when the doping concentration changes from 5×1014/cm3 to 2×1015/cm3
Keywords :
power semiconductor diodes; semiconductor device breakdown; -70 to 130 V; ATLAS; breakdown voltage; doping concentration; gate voltage; gated diode; oxide thickness; two-dimensional device simulation; Breakdown voltage; Diodes; Doping; Electric breakdown; Equations; Human resource management; Large Hadron Collider;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
Type :
conf
DOI :
10.1109/ICMEL.2000.838778
Filename :
838778
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1951745
بازگشت