DocumentCode :
1951781
Title :
A statistical model of oxide breakdown based on a physical description of wearout
Author :
Subramoniam, R. ; Scott, R.S. ; Dumin, D.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
fYear :
1992
fDate :
13-16 Dec. 1992
Firstpage :
135
Lastpage :
138
Abstract :
The breakdown of oxides has been related to wearout. A model has been developed that described the statistics of breakdown in terms of the wearout that occurred prior to breakdown. TDDB distributions given in the literature were accurately simulated (i) for area dependence, (ii) for both constant voltage and constant current stressing, and (iii) for multi-modal distributions. Defect related breakdown was incorporated by introducing the concept of "degree of wearout". A possible method for determining the reliability of an oxide at operating voltages from the accelerated test results has been developed.<>
Keywords :
electric breakdown of solids; insulating thin films; life testing; semiconductor device models; semiconductor device testing; semiconductor devices; statistical analysis; TDDB distributions; accelerated test results; area dependence; constant current stressing; constant voltage stressing; defect related breakdown; insulating thin films; multi-modal distributions; oxide breakdown; reliability; semiconductor device testing; statistical model; wearout; Dielectric films; Electric breakdown; Life estimation; Semiconductor device modeling; Semiconductor device testing; Semiconductor devices; Statistics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1992.307326
Filename :
307326
Link To Document :
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