DocumentCode
1952017
Title
Modeling of a sputter reactor using the direct simulation Monte Carlo method
Author
Kersch, A. ; Morokoff, W. ; Werner, C. ; Restaino, D. ; Vollmer, B.
Author_Institution
Corp. Res. & Dev., Siemens AG, Munich, Germany
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
181
Lastpage
184
Abstract
The direct simulation Monte Carlo method is utilized to simulate the particle and energy distributions in a state of the art sputtering reactor used to deposit titanium films in small contact holes. The calculations provide information about particle and temperature distributions within the reactor, deposition rate profiles, and angular distributions of the atoms arriving at the substrate. The results agree quite well with experimental data.<>
Keywords
Monte Carlo methods; metallisation; semiconductor process modelling; simulation; sputter deposition; temperature distribution; titanium; Ti films; angular distributions; deposition rate profiles; direct simulation Monte Carlo method; energy distributions; numerical method; particle distributions; small contact holes; sputter reactor; temperature distributions; Metallization; Monte Carlo methods; Semiconductor process modeling; Simulation; Sputtering; Temperature; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307337
Filename
307337
Link To Document