Dielectrically isolated lateral high voltage P-i-N rectifiers for power ICs

Lateral DI and JI P-i-N rectifiers with breakdown voltages up to 600 V have been fabricated by using the RESURF principle. The reverse recovery times for the DI rectifiers were measured to be much smaller than those in JI devices, which two-dimensional numerical simulation shows to be due to elimination of injection into the substrate. This injection is also responsible for a parasitic steady state substrate current in JI devices, which is absent in DI devices. The DI rectifiers were observed to have a positive temperature coefficient for the on-state voltage drop as compared with a negative temperature coefficient observed for JI devices. The variation in breakdown voltage with substrate bias in DI devices was found to depend upon whether the breakdown was determined by the vertical or lateral electric field.<>