Title :
Modelling and analysis of current sensors for N-channel, vertical IGBTs
Author :
Chow, T.P. ; Shen, Z. ; Pattanayak, D.N. ; Wildi, E.J. ; Adler, M.S. ; Baliga, B.J.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The static and dynamic performance of integrated current sensors in 500V, n-channel, asymmetric, vertical IGBTs are modelled and experimentally characterized. Two different current sensor structures are studied and compared. The active IGBT pilot shows more linear tracking of the main current with small pilot load resistor but the passive pilot is less susceptible to debiasing effect for a large resistor. During turn-on, the active pilot leads the main current due to RC delay whereas the passive pilot lags due to minority carrier diffusion.<>
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; 500 V; N-channel vertical IGBTs; active pilot; current sensors; debiasing effect; dynamic performance; linear tracking; minority carrier diffusion; passive pilot; pilot load resistor; static performance; turn-on; Insulated gate bipolar transistors; Power transistors; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307354
