Title :
A statistical model for electromigration failures
Author :
Yoh, Gilbert ; Najm, Farid N.
Author_Institution :
Integrated Circuits Bus. Div., Agilent Technol., Fort Collins, CO, USA
Abstract :
The lognormal has been traditionally used to model the failure time distribution of electromigration failures. However, when used to estimate the failure of large metal layers, it leads to a clear disagreement with established empirical data. To resolve this problem, we propose to use a shifted lognormal (SLN) as a better model of the failure time of individual wires. We will show that the SLN is well justified because it matches other more detailed and more physical models, such as the multilognormal. We will also show that the SLN exhibits the right behavior for long wires. Finally, we will provide an estimation methodology by which the parameters of the SLN can be estimated from failure data. Finally, the analysis will be extended to large metal layers where the advantages of using SLN over LN will be clearly demonstrated
Keywords :
electromigration; failure analysis; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; statistical analysis; electromigration failures; estimation methodology; failure time distribution; individual wires; metal layers; shifted lognormal; statistical model; Copper; Data analysis; Electromigration; Grain boundaries; Inorganic materials; Integrated circuit modeling; Integrated circuit technology; Lead; Process design; Wire;
Conference_Titel :
Quality Electronic Design, 2000. ISQED 2000. Proceedings. IEEE 2000 First International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
0-7695-0525-2
DOI :
10.1109/ISQED.2000.838852