Title :
Analytical collector current density and base transit time models for high-injection regions
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Using perturbation theory focused on modulated electric fields due to injected electrons, we derived analytical models for collector current density, J/sub n/, and base transit time, tau /sub B/, for arbitrarily doped bases. These models are the first valid for arbitrary injection levels before the onset of the Kirk effect, and they include existing models as special cases. Our model predicts that tau /sub B/ for the Gaussian-doped base is still smaller than that for the box-doped base even in high-injection regions.<>
Keywords :
bipolar transistors; current density; doping profiles; electric fields; high field effects; perturbation techniques; semiconductor device models; Gaussian-doped base; analytical models; arbitrarily doped bases; base transit time; box-doped base; collector current density; high-injection regions; injected electrons; modulated electric fields; perturbation theory; Bipolar transistors; Current density; Electric fields; Perturbation methods; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307389