DocumentCode :
1952990
Title :
A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors
Author :
Verzellesi, G. ; Vendrame, L. ; Turetta, R. ; Pavan, P. ; Chantre, A. ; Marty, A. ; Cavone, M. ; Rivoir, R. ; Zanoni, E.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
fYear :
1992
fDate :
13-16 Dec. 1992
Firstpage :
413
Lastpage :
416
Abstract :
A new DC technique for extracting parasitic base resistance, R/sub B/, of advanced bipolar transistors is described. The technique is based on impact-ionization-induced base current reversal and enables R/sub B/ to be measured as a function of collector-base voltage and of emitter current. To obtain accurate results, the influence of the Early effect on the emitter-base voltage at constant emitter current must be accounted for. Measured values of R/sub B/ are correlated with current crowding phenomena, which can be directly observed by means of emission microscopy.<>
Keywords :
bipolar transistors; electric resistance measurement; impact ionisation; semiconductor device testing; DC technique; Early effect; base resistance extraction; bipolar transistors; collector-base voltage; current crowding phenomena; emission microscopy; emitter current; emitter-base voltage; experimental technique; impact-ionization-induced base current reversal; parasitic base resistance; Bipolar transistors; Impact ionization; Resistance measurement; Semiconductor device testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1992.307390
Filename :
307390
Link To Document :
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