DocumentCode :
1953011
Title :
Experimental Analysis of the Film Thickness Influence on the Performance of Accumulation-Mode Simox Mosfet´s
Author :
Faynot, O. ; Auberton-Herve, A.-J. ; Cristoloveanu, S.
Author_Institution :
LETI (CEA-Technologies Avancees), France
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
114
Lastpage :
115
Keywords :
Annealing; Breakdown voltage; Electrons; MOSFET circuits; Optical films; Performance analysis; Semiconductor films; Temperature; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664820
Filename :
664820
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1953011
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